Transistor

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Radiation-Hardened Dual Gate Semiconductor Transistor Devices

This disclosure is related to the field of semiconductor and electrical systems. In particular, this disclosure includes systems and components including, for example, various embodiments of a new capabilities metal oxide semiconductor (NCMOS). Methods of manufacturing and operation are also included. Metal Oxide Field Effect Transistors (MOSFETs) are used because of their fast switching, low

Method of Making a Graphene Base Transistor With Reduced Collector Area

This disclosure describes a semiconductor transistor device having a graphene base transistor with reduced collector area, and method for fabrication. The graphene base transistor with reduced collector area comprises an electron injection region (the first region), an electron collection region (the third region), and a base region (second region) with the base region consisting of